.png)
MRFE6P9220HR3 865-900 MHz, 47 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source
MRFE6P3300HR3 860 MHz, 300 W, 32 V Lateral N-Channel Broadband RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
MRF959 Data Sheet: NPN Silicon Low Noise Transistors
Archived 2005 - NPN Silicon Low Noise Transistors
MRF949 Data Sheet: NPN Silicon Low Noise Transistor
Archived 2005 - NPN Silicon Low Noise Transistors
MRF9060NR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source
MRF9045NR1, 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRF8S9202NR3, MRF8S9202GNR3 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S9170NR3 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S9100HR3, MRF8S9100HSR3 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
