MRF8P23160WHR3, MRF8P23160WHSR3 2300-2400 MHz, 30 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz.

MRF8P20100HR3, MRF8P20100HSR3 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz.

MRF8P18265HR6, MRF8P18265HSR6 1805-1880 MHz, 72 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8HP21130HR3, MRF8HP21130HSR3 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF7S38075HR3, MRF7S38075HSR3 3400-3600 MHz, 12 W Avg., 30 V, WiMAX Lateral N-Channel RF Power MOSFETs

Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

MRF7S38010HR3, MRF7S38010HSR3 3400-3600 MHz, 2 W Avg., 30 V, WiMAX Lateral N-Channel RF Power MOSFETs

Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

MRF7S35120HSR3 3100-3500 MHz, 120 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET

Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

MRF7S27130HR3, MRF7S27130HSR3 2500-2700 MHz, 23 W Avg., 28 V, WiMAX Lateral N-Channel RF Power MOSFETs

Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

MRF7S21170HR3, MRF7S21170HSR3 2110-2170 MHz, 50 W AVG., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S19100NR1 MRF7S19100NBR1 1930-1990 MHz, 29 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.