MRF7S35120HSR3 3100-3500 MHz, 120 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET
Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35120HSR3 3100-3500 MHz, 120 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET
Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.