MRF7S19080HR3, MRF7S19080HSR3 1930-1990 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S15100HR3, MRF7S15100HSR3 1510 MHz, 23 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF6VP41KHR6, MRF6VP41KHSR6 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

MRF6VP2600HR6 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET

Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

MRF6VP21KHR6 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET

Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.

MRF6V2300NR1, MRF6V2300NBR1, 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs

Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz.

MRF6S21190HR3, MRF6S21190HSR3 2110-2170 MHz, 54 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz.

MRF6S21140HR3, MRF6S21140HSR3 2110-2170 MHz, 30 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF6S21100HR3, MRF6S21100HSR3 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF6S21050LR3, MRF6S21050LSR3 2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular