MRF6VP2600HR6 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600HR6 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.