MRF6S19100NR1, MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF6S19100HR3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF6S18060NR1, MRF6S18060NBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MRF21010LR1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF19085LR3 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF19085LSR3 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF18085ALSR3 1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

MPXY8021A Tire Pressure Monitoring Sensor Temperature Compensated and Calibrated, Fully Integrated, Digital Output

The NXP Semiconductors, Inc. MPXY8021A sensor is an 8-pin tire monitoring sensor which is comprised of a variable capacitance pressure sensing element, a temperature sensing element, and an interface

MPXY8000 Tire Pressure Monitoring Sensor Temp Compensated

The Motorola MPXY8000 series sensor is an 8-pin tire monitoring sensor which is comprised of a variable capacitance pressure sensing element, a temperature sensing element, and an interface circuit