MRF18085ALSR3 1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS
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