MRF18090AR3 1805-1880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET - Archived
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM
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