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A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V AirfastВ® RF power GaN transistor for cellular base stations
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A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V GaN Data Sheet
A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V AirfastВ® RF power GaN transistor for cellular base stations
A2G35S160-01S 3400-3600 MHz, 32 W Avg, 48 V GaN Data Sheet
A2G35S160-01S 3400-3600 MHz, 32 W Avg, 48 V AirfastВ® RF power GaN transistor for cellular base stations
A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet
A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V Airfast RF power GaN transistor for cellular base stations
A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet
A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V AirfastВ® RF power GaN transistor for cellular base stations
A2G22S160-01S 1800–2200 MHz, 32 W AVG., 48 V Airfast® RF Power GaN Transistor Data Sheet
NXPВ® 32 W RF power GaN transistor designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
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