A2G22S160-01S 1800–2200 MHz, 32 W AVG., 48 V Airfast® RF Power GaN Transistor Data Sheet
NXPВ® 32 W RF power GaN transistor designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
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A2G22S160-01S 1800–2200 MHz, 32 W AVG., 48 V Airfast® RF Power GaN Transistor Data Sheet
NXPВ® 32 W RF power GaN transistor designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.