MRFE8VP8600H 140 W Avg, 470-870 MHz, 50 V Data Sheet

MRFE8VP8600H 140 W Avg over 470-870 MHz, 50 V RF power LDMOS transistor for UHF TV broadcast applications

MRFE6VS25L 1.8-2000 MHz, 25 W, 50 V Data Sheet

MRFE6VS25L 25 W CW over 1.8-2000 MHz, 50 V high ruggedness RF power LDMOS transistor for narrowband and broadband ISM, broadcast and aerospace applications

MRFE6VP8600HR6, MRFE6VP8600HR5, MRFE6VP8600HSR6, MRFE6VP8600HSR5 470-860 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power Transistors

Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices are ideally suited for use in analog or digital

MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet

Extremely rugged 600 W transistors for ISM, broadcast, aerospace and mobile radio applications between 1.8 and 600 MHz.

MRFE6VP6300HR3, MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications.

MRFE6VP61K25N, MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet

MRFE6VP61K25N, MRFE6VP61K25GN are extremely rugged 1250 W transistor for ISM, broadcast, aerospace and mobile radio applications between 1.8 and 600 MHz.

MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

MRFE6VP61K25H, MRFE6VP61K25HS, and MRFE6VP61K25GS are high ruggedness devices and are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital

MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.

MRFE6VP5300NR1, MRFE6VP5300GNR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet

MRFE6VP5300N and MRFE6VP5300GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio

MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

MRFE6VP5150N and MRFE6VP5150GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio