MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

MRF6S27085HR3, MRF6S27085HSR3 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL

MRF6S27015NR1, MRF6S27015GNR1 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz.

MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose

MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF6P27160HR6 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL

MRF6P24190HR6 2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET

Designed primarily for large-signal output applications at 2450 MHz.

MMRF1005HR5, MMRF1005HSR5 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs - Data Sheet

The MMRF1005HR5 and MMRF1005HSR5 are RF power transistors designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in defense and commercial CW and pulse

MMRF1004NR1, MMRF1004GNR1 1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose

MML25231H 1000-4000 MHz LNA Data Sheet

1000-4000 MHz, 15.2 dB, 23 dBm P1dB, 0.36 NF Low Noise Amplifier