Dual universal asynchronous receiver/transmitter (DUART)
SC28L202 SC28L202 Dual universal asynchronous receiver/transmitter (DUART) Product data sheet Supersedes data of 2004 Apr
Dual universal asynchronous receiver/transmitter (DUART)
SC28L202 SC28L202 Dual universal asynchronous receiver/transmitter (DUART) Product data sheet Supersedes data of 2004 Apr
Octal UART for 3.3 V and 5 V supply voltage
SC28L198 SC28L198 Octal UART for 3.3 V and 5 V supply voltage Product data sheet Supersedes data of 1999 Jan 14 2006 Aug 10 INTEGRATED
Quad UART for 3.3 V and 5 V supply voltage
SC28L194 SC28L194 Quad UART for 3.3 V and 5 V supply voltage Product data sheet Supersedes data of 2001 Feb 13 IC19 Data Handbook 2006
Quad universal asynchronous receiver/transmitter (QUART)
SC28C94 SC28C94 Quad universal asynchronous receiver/transmitter (QUART) Product data sheet Supersedes data of 1998 Aug 19
Dual UART with I2C-bus/SPI interface, 64 bytes of transmit and receive FIFOs, IrDA SIR built-in support
Dual UART with I2C-bus/SPI interface, 64 bytes of transmit and receive FIFOs, IrDA SIR built-in support
Single UART with I2C-bus/SPI interface, 64 bytes of transmit and receive FIFOs, IrDA SIR built-in support
Single UART with I2C-bus/SPI interface, 64 bytes of transmit and receive FIFOs, IrDA SIR built-in support
1.8 V dual UART, 20 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA), and XScale VLIO bus interface
SC16C852SV 1. General description The SC16C852SV is a 1.8 V, low power dual channel Universal
MRF5S9080NR1 MRF5S9080NBR1 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
MRF24300N 300 W CW, 2400-2500 MHz, 32 V Data Sheet
MRF24300N 300 W CW over 2400-2500 MHz, 32 V RF power LDMOS transistor for industrial, scientific, medical (ISM) applications at 2450 MHz.
MRF1K50N 1500 W CW, 1.8-500 MHz, 50 V Data Sheet
MRF1K50N 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications