AFT18H357-24N 1805–1880 MHz, 63 W AVG., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet

63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz

AFT18H356-24SR6 1805-1995 MHz, 63 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz

AFT09S282NR3 720-960 MHz, 80 W AVG., 28 V Airfast^В® RF Power LDMOS Transistor - Data Sheet

The AFT09S282NR3 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

AFT09S220-02N 850-960 MHz, 54 W Avg, 28 V Data Sheet

AFT09S220-02N 850-960 MHz, 54 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

AFT09S200W02S 56 W RF power LDMOS transistor for cellular base station applications requiring very wide instantaneous bandwidth in the 920-960 MHz band

AFT09S200W02NR3, AFT09S200W02GNR3 716-960 MHz, 56 W AVG., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

AFT09S200W02NR3 and AFT09S200W02GNR3 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency

AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet

AFT09MS031N and AFT09MS031GN are designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make

AFT09MS015NT1 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor - Data Sheet

The AFT09MS015N is designed for mobile two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

The AFT09MS007NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large

AFT09MP055NR1, AFT09MP055GNR1 764-941 MHz, 55 W, 12.5 V Broadband RF Power LDMOS Transistors - Data Sheet

AFT09MP055N and AFT09MP055GN are designed for mobile two-way radio applications with frequencies from 764-941 MHz