MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs
Designed primarily for large-signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications.
MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs
Designed primarily for large-signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications.
MRF6S23140HR3, MRF6S23140HSR3 2300-2400 MHz, 28 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL
MRF6S23100HR3, MRF6S23100HSR3 2300-2400 MHz, 20 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL
MRF6S21100NR1, MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF6S21060NR1, MRF6S21060NBR1 2110-2170 MHz, 14 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz.
MRF6S19200HR3, MRF6S19200HSR3 1930-1990 MHz, 56 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.
MRF6S19060NR1, MRF6S19060NBR1 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF6S18100NR1, MRF6S18100NBR1 1805-1990 MHz, 100 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MMM7210 WCDMA/GSM/EDGE Transceiver
The MMM7210 transceiver is a highly integrated transceiver that supports 3GPP WCDMA/GSM/EGPRS wireless standards. The digital input/output of the MMM7210 interfaces directly to a baseband processor
MMM5062 Technical Data Sheet: Quad-Band GSM GPRS 3.5 V Power Amplifier
Archived 2005 - Quad-Band GSM GPRS 3.5 V Power Amplifier