MRF6S18100NR1, MRF6S18100NBR1 1805-1990 MHz, 100 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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