MM912_637D1, Intelligent Integrated Precision Battery Sensor - Data Sheet

The MM912I637 (96 kB) and MM912J637 (128 kB) are fully integrated LIN Battery monitoring devices, based on SMARTMOS^В® and S12 MCU Technology.

MM912_634D1, MM912G634 and MM912H634 Integrated S12 Based Relay Driver with LIN - Data Sheet

The MM912G634 (48 kB) and MM912H634 (64 kB) are integrated, single package solutions that integrate an HCS12 microcontroller with a SMARTMOS^В® analog control IC.

MM912F634 - Integrated S12 Based Relay Driver with LIN - Data Sheet

The MM912F634 is an integrated single package solution integrating an HCS12 microcontroller with a SMARTMOS^В® analog control IC.

MM908E625, Integrated Quad Half H-Bridge with Power Supply, Embedded MCU, and LIN Serial Communication

The 908E625 is an integrated single-package solution including a high-performance HC08 microcontroller with a SMARTMOS^В® TM analog control IC.

MM908E624, Integrated Triple High Side Switch with Embedded MCU and LIN Serial Communication for Relay Drivers

The 908E624 is an integrated single-package solution that includes a high-performance HC08 microcontroller with a SMARTMOSTM analog control IC. The HC08 includes flash memory, a timer, enhanced

MHW9189 870 MHz, 20.3 dB Gain, 132-Channel GaAs CATV Amplifier Module

24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Mirror Power Doubler Amplifier Module

MHW1244 5-200 MHz, 24.0 dB, 26-Channel CATV High-Split Reverse Amplifier - Archive

24 Vdc Supply, 5 to 200 MHz, CATV Reverse Amplifier

MHVIC915NR2 746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE, RF LDMOS Wideband Integrated Power Amplifier

The MHVIC915NR2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers

MHVIC910HNR2 960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit

MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Our newest High Voltage (26 Volts) LDMOS IC technology, and contains a three-stage amplifier.

MHVIC2114NR2 2100 MHz, 27 V, 23 dBm, Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier

The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.