AFT23S160W02SR3, AFT23S160W02GSR3 2300-2400 MHz, 45 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

The AFT23S160W02S and AFT23S160W02GS 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering

AFT23H200-4S2LR6 2300-2400 MHz, 45 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

The AFT23H200-4S2LR6 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

AFT23H160-25S 2300-2400 MHz, 32 W Avg, 28 V Data Sheet

AFT23H160-25S 2300-2400 MHz, 32 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

AFT21S240-12SR3 2110-2170 MHz, 55 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor - Data Sheet

The AFT21S240-12S 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

AFT21S230SR3, AFT21S230-12SR3, AFT21S232SR3 2110-2170 MHz, 50 W AVG., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

AFT21S230SR3, AFT21S230-12SR3 and AFT21S232SR3 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

AFT21S220W02SR3, AFT21S220W02GSR3 2110-2170 MHz, 50 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

The AFT21S220W02S and AFT21S220W02GS 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency

AFT21S140W02SR3, AFT21S140W02GSR3 2110-2170 MHz, 32 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

The AFT21S140W02S and AFT21S140W02GS 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency

AFT21H350W03SR6 AFT21H350W04GSR6 2110-2170 MHz, 63 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

AFT21H350W03SR6 and AFT21H350W04GSR6 are 63 watt asymmetrical Doherty RF power LDMOS transistors designed for cellular base station applications requiring very wide instantaneous bandwidth capability

AFT20S015NR1, AFT20S015GNR1 1805-2700 MHz, 1.5 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

The AFT20S015N 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.

AFT20P140-4WN 1880-2025 MHz, 24 W Avg, 28 V Data Sheet

AFT20P140-4WN 24 W Avg, 1880-2025 MHz, 28 V symmetrical Doherty RF power LDMOS transistor for cellular base stations