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Автор: Tonich от 13-02-2020, 16:48

MMRF1017NR3 720-960 MHz, 80 W Avg., 28 V AirfastВ® RF Power LDMOS Transistor - Data Sheet

MMRF1017NR3 is an 80 W RF power LDMOS transistor designed for wideband RF power amplifiers covering the frequency range of 720 to 960 MHz.

Автор: Tonich от 13-02-2020, 16:48

MMRF1018NR1, MMR1018NBR1 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet

The MMRF1018NR1 and MMRF1018NBR1 are 90 W RF power LDMOS transistors and are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.

Автор: Tonich от 13-02-2020, 16:48

MMRF1020-04NR3, MMRF1020-04GNR3 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors - Data Sheet

The MMRF1020-04NR3 and MMRF1020-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

Автор: Tonich от 13-02-2020, 16:48

MMRF1022HS 2110-2170 MHz, 63 W Avg, 28 V Data Sheet

MMRF1022HS 2110-2170 MHz, 63 W Avg, 28 V RF power LDMOS transistor for commercial and defense communications and electronic warfare applications

Автор: Tonich от 13-02-2020, 16:48

MMRF1023HS 2300-2400 MHz, 66 W Avg, 28 V Data Sheet

MMRF1023HS 2300-2400 MHz, 66 W Avg, 28 V RF power LDMOS transistor for commercial and defense communications and electronic warfare applications

Автор: Tonich от 13-02-2020, 16:48

MMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V Data Sheet

MMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V RF power LDMOS transistor for commercial and defense communications and electronic warfare applications

Автор: Tonich от 13-02-2020, 16:48

MMRF1304LR5 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor - Data Sheet

The MMRF1304LR5 is an RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications

Автор: Tonich от 13-02-2020, 16:48

MMRF1304NR1, MMRF1304GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

The MMRF1304NR1 and MMRF1304GNR1 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio

Автор: Tonich от 13-02-2020, 16:48

MMRF1305HR5, MMRF1305HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet

The MMRF1305HR5 and MMRF1305HSR5 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military and radio

Автор: Tonich от 13-02-2020, 16:48

MMRF1306HR5, MMRF1306HSR5 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications.