MMRF1308HR5, MMRF1308HSR5 1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet

The MMRF1308HR5 and MMRF1308HSR5 are high ruggedness devices and are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog

MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet

The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices and are designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital

MMRF1312H 900-1215 MHz, 1000 W Peak, 52 V Data Sheet

MMRF1312H 900-1215 MHz, 1000 W Peak, 52 V RF LDMOS power transistor for high power military and commercial L-Band applications

MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet

MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V RF LDMOS power transistor for high power military and commercial L-Band radar applications

MMRF1315NR1 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor - Data Sheet

The MMRF1315NR1 is designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device are ideal for large

MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet

The MMRF1316NR1 is a high ruggedness device and is designed for use in VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design

MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet

MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V RF LDMOS power transistor for defense and commercial pulse applications, such as IFF and secondary radars

MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor Data Sheet

MMRF1318N is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz.

1.8-600 MHz, 150 W CW, 50 V RF Power LDMOS Transistor Data Sheet

MMRF1320N, MMRF1320GN 1.8-600 MHz, 150 W CW, 50 V RF power LDMOS transistor for commercial radio communications and HF, VHF and UHF radar applications

MMRF2004NBR1 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier - Data Sheet

The MMRF2004NBR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers