MHL9838 800-925 MHz 8.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
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MHL9838 800-925 MHz 8.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MRF20030R 2 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor - Archived
30 W, 2.0 GHz, NPN Silicon Broadband RF Power Transistor
MHL9318N 3.0 W, 17.5 dB, 860-900 MHz RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9318 3.0 W, 17.5 dB, 860-900 MHz RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9236NN 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9236N 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9236MN 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL21336NN 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL21336N 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL21336 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.