MHW1224 22.0 dB, 24.0 dB, 5.0-200 MHz CATV High-Split Reverse Amplifiers - Archived
Designed specifically for broadband applications requiring low distortion characteristics.
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MHW1224 22.0 dB, 24.0 dB, 5.0-200 MHz CATV High-Split Reverse Amplifiers - Archived
Designed specifically for broadband applications requiring low distortion characteristics.
MHW1223LA 5-200 MHz, 22.7 dB, 10-Channel CATV Low Current Amplifier Module - Archived
24 Vdc Supply, 5 to 200 MHz, CATV Reverse Amplifier Module
MHVIC910HR2 960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit - Archived
The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Our newest High Voltage (26 Volts) LDMOS IC technology, and contains a three-stage amplifier.
MHPA21010N 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA19010N 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA18010N 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain.
MRF6522-60 960 MHz, 60 W Lateral N-Channel Broadband RF Power MOSFET - Archived
Designed for broadband commercial and industrial applications at frequencies up to 1 GHz and specified for the GSM 925-960 MHz band.