MRF20060R, MRF20060RS 2 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistors - Archived

60 W, 2000 MHz RF Power Broadband NPN Bipolar

MRF19120 1990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MHL9236, MHL9236M 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.

MHL9128 800-960 MHz, 1.3 W, 15 V, 20 dB, UHF Linear Amplifier - Archived

1.3 W, 30 dB, 800-960 MHz Linear Amplifier

MHL8118 50-1000 MHz, 1 W, 28 V, 17.5 dB RF Power Amplifier - Archived

1 W, 17.5 dB, 50-1000 MHz Linear Amplifier

MRF9002NR2 1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source

MMG5004NR2 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN Power Amplifier InGaP HBT - Archived

Designed for 802.11a applications with frequencies from 4900 to 5900 MHz.

MHW8205R 860 MHz, 20 dB, 128-Channel High Output Mirror Power Doubler CATV Amplifier - Archived

20.2 dB Gain, 860 MHz, 128-Channel CATV Amplifier

MHW8185R 860 MHz, 18 dB, 128-Channel High Output Mirror Power Doubler CATV Amplifier - Archived

19.4 dB Gain, 860 MHz, 128-Channel CATV Amplifier

MRF6522-5R1 960 MHz, 5.0 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The MRF6522-5R1 has been specifically designed for use in Communications Network (GSM) base stations.