MRF6522-10R1 960 MHz, 10 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for Class AAB common source, linear power amplifiers in the 960 MHz range. The MRF6522-10R1 has been specifically designed for use in Communications Network (GSM) base stations.

MRF21180R6 2110-2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21120R6 2110-2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21030LR3, MRF21030LSR3 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

MRF19125R3 1930-1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF186 1.0 GHz, 120 W, 28 V Lateral N-Channel Broadband RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 800 MHz-1 GHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source

MRF185 1.0 GHz, 85 W, 28 V Lateral N-Channel Broadband RF Power MOSFET - Archived

1.0 GHz, 85 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

MRF18090AR3 1805-1880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM

MRF1518T1 520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source

MRF1517T1 520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET - Archived

MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common