MRF6522-70R3 920-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 26 volt base station equipment.

MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

MRF374 470-860 MHz, 100 W, 28 V Lateral N-Channel Broadband RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common

MRF372R3, MRF372R5 470-860 MHz, 180 W, 32 V Lateral N-Channel RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common

MRF282SR1, MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MRF21125R3, MRF21125SR3 2110-2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21090R3, MRF21090SR3 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

MRF21085LR3, MRF21085LSR3 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21060LR3, MRF21060LSR3 2110-2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W-CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

MRF19085LR3, MRF19085LSR3 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.