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Автор: Tonich от 13-02-2020, 16:49

MRF19060LR3, MRF19060LSR3 1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications.

Автор: Tonich от 13-02-2020, 16:49

MRF19045LR3, MRF19045LSR3 1930-1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Автор: Tonich от 13-02-2020, 16:49

MRF184R1, MRF184SR1 1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source

Автор: Tonich от 13-02-2020, 16:49

MRf183R1, MRF183LSR1 1.0 GHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source

Автор: Tonich от 13-02-2020, 16:49

MRF182R1, MRF182SR1 1.0 GHz, 30 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

1.0 GHz, 30 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Автор: Tonich от 13-02-2020, 16:49

MRF18090BR3, MRF18090BSR3 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETS - Archived

Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE

Автор: Tonich от 13-02-2020, 16:49

MRF18060BLR3, MRF18060BLSR3, 1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN/PCS

Автор: Tonich от 13-02-2020, 16:49

MRF18060ALR3, MRF18060ALSR3 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

Автор: Tonich от 13-02-2020, 16:49

MRF1570T1, MRF1570FT1, 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

Автор: Tonich от 13-02-2020, 16:49

MRF1550T1, MRF1550FT1, 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source