MRF282SR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET - Archived

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MRF21085LSR3 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21085LR3 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF18060ALR3 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

MRF18060ALSR3 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

ARCHIVED 2005 - MMM5063 Advance Information Data Sheet: Tri-Band GSM GPRS 3.5 V Power Amplifier

Archived 2005 - Tri-Band GSM GPRS 3.5 V Power Amplifier

MRF9060LR1, MRF9060LSR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source

MRF19030LR3, MRF19030LSR3 1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

MRF18085ALR3 1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

MRF18030ALSR3 1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET - Archived

Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz.