MRF9482 Product Preview Data Sheet: Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET
Archived 2005 - Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
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MRF9482 Product Preview Data Sheet: Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET
Archived 2005 - Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
MRFE6S8046NR1, MRFE6S8046GNR1 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications.
MRFE6S9130HR3, MRFE6S9130HSR3 880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
MRFE6S9135HR3, MRFE6S9135HSR3 940 MHz, 39 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRFE6S9200HR3, MRFE6S9200HSR3 880 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRFE6S9201HR3, MRFE6S9201HSR3 880 MHz, 40 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source
MRFE6S9205HR3, MRFE6S9205HSR3 880 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz.
MRFG35003ANT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz.
MRFG35005ANT1, 3.5 GHz, 4.5 W, 12 V Power FET GaAs PHEMT
Designed for WLL/MMDS/BWA or UMTS applications with frequencies from 500 to 5000 MHz.