MW4IC001NR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses NXP^В®. newest High Voltage (26 to 28 Volts) LDMOS IC

MW4IC2020NBR1, MW4IC2020GNBR1 1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA, RF LDMOS Wideband Integrated Power Amplifiers

The MW4IC2020 wideband integrated circuit is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers

MW4IC2230NBR1, MW4IC2230GNBR1 2110-2170 MHz, 30 W, 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MW4IC2230 wideband integrated circuit is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers

MW4IC915NBR1, MW4IC915GNBR1 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers

MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses NXP^В®. newest High Voltage (26 to 28 Volts) LDMOS IC technology

MW5IC2030NBR1, MW5IC2030GNBR1 1930-1990 MHz, 30 W, 26 V, GSM/GSM EDGE, W-CDMA, PHS, RF LDMOS Wideband Integrated Power Amplifiers

The MW5IC2030N wideband integrated circuit is designed with on-chip matching that makes it usable from 1930 to 1990 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers

MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses NXP^В®. newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi

MW6IC2240NBR1, MW6IC2240GNBR1 2110-2170 MHz, 4.5 W Avg., 28 V, 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MW6IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 to 2170 MHz.

MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW RF LDMOS Integrated Power Amplifier

The MW6IC2420NB integrated circuit is designed with on-chip matching that makes it usable at 2450 MHz.

MW7IC18100NR1, MW7IC18100GNR1, MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz.

MW7IC3825NR1, MW7IC3825GNR1, MW7IC3825NBR1, 3400-3600 MHz, 5 W AVG., 28 V WiMAX, RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400-3600 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers