MRF8S21100HR3, MRF8S21100HSR3 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
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