MRF6V2150NR1, MRF6V2150NBR1, 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs
Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz.
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MRF6V2150NR1, MRF6V2150NBR1, 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs
Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz.