MRF9130LR3, MRF9130LSR3 GSM/GSM EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common-source
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