MRF6S18060MR1, MRF6S18060MBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
Скачать: MRF6S18060