ARCHIVED 2006 - MPC7455 Part Number Specification for the XC7455BRXnnnPx Series

This document describes part-number-specific changes to recommended operation conditions and revised electrical specifications, as applicable, from the those described in the general MPC7455 RISC

ARCHIVED 2005 - MPC7455 Part Number Specification for the XPC74x5RXnnnPx Series

part number specification data sheet

ARCHIVED 2005 - DSP56307EVM Evaluation Module Product Brief

DSP56307 Evaluation Module Product Brief

MWIC930R1, MWIC930GR1 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers - Archived

MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure

MRF6S9125NR1, MRF6S9125NBR1 865-960 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MW5IC2030MBR1, MW5IC2030GMBR1 1930-1990 MHz, 30 W, 26 V, GSM/GSM EDGE, W-CDMA, PHS, RF LDMOS Wideband Integrated Power Amplifiers - Archived

The MW5IC2030 wideband integrated circuit is designed with on-chip matching that makes it usable from 1930 to 1990 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers

MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF5S21090HR3, MRF5S21090HSR3, 2110-2170 MHz, 19 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF5S21100HR3, MRF5S21100HSR3 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF5S21150HR3, MRF5S21150HSR3 2110-2170 MHz, 33 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular