Главная » NXP Semiconductors » Страница 17
Автор: Tonich от 13-02-2020, 16:49

ARCHIVED 2006 - MPC860ADSENGUM1_1 Data Sheet

Archived 2006

Автор: Tonich от 13-02-2020, 16:49

ARCHIVED 2005 - MPX2700A Data Sheet

Archived 2005

Автор: Tonich от 13-02-2020, 16:49

ARCHIVED 2005 - MPXT5006DANT Data Sheet

Archived 2005

Автор: Tonich от 13-02-2020, 16:49

MRF18030ALR3 MRF18030ALSR3 1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

Автор: Tonich от 13-02-2020, 16:49

MRF18030BLR3, MRF18030BLSR3, 1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz.

Автор: Tonich от 13-02-2020, 16:49

MRF18085ALR3, MRF18085ALSR3 1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

Автор: Tonich от 13-02-2020, 16:49

MRF18085BLR3, MRF18085BLSR3 1930-1990 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

Автор: Tonich от 13-02-2020, 16:49

MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

Автор: Tonich от 13-02-2020, 16:49

MRF5P21180R6 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Автор: Tonich от 13-02-2020, 16:49

MRF5P21240R6 2170 MHz, 52 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular