MRF18085BLR3, MRF18085BLSR3 1930-1990 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
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