A2T07H310-24SR6 716–960 MHz, 47 W AVG., 28 V Airfast^® RF Power LDMOS Transistor - Data Sheet

47 W asymmetrical Doherty RF power LDMOS transistor for cellular base station applications covering frequency range of 716 to 960 MHz.

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet

A2T09D400-23N 716-960 MHz, 93 W Avg., 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T09VD250N 716-960 MHz, 65 W Avg, 48 V Data Sheet

A2T09VD250N 716-960 MHz, 65 W Avg, 48 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T09VD300N 716-960 MHz, 79 W Avg, 48 V Data Sheet

A2T09VD300N 716-960 MHz, 79 W Avg, 48 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T14H450-23N 1452-1511 MHz, 93 W Avg, 31 V Data Sheet

A2T14H450-23N 1452-1511 MHz, 93 W Avg, 31 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

A2T18H100-25S 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering frequencies from 1805 to 1995 MHz.

A2T18H160-24S 1805-1880 MHz, 28 W Avg, 28 V Data Sheet

A2T18H160-24S 1805-1880 MHz, 28 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T18H410-24S 1805-1880 MHz, 71 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

A2T18H410-24S 71 W asymmetrical Doherty RF power LDMOS transistor for cellular base station applications covering the 1805 to 1880 MHz band.

A2T18H450W19S 1805-1880 MHz, 89 W Avg, 30 V Data Sheet

A2T18H450W19S 1805-1880 MHz, 89 W Avg, 30 V AirfastВ®, RF power LDMOS transistor for cellular base stations