A2T20H330W24S 1880-2025 MHz, 58 W Avg., 28 V AirfastВ® RF Power LDMOS Transistors Data Sheet
58 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 1880 to 2025 MHz.
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A2T20H330W24S 1880-2025 MHz, 58 W Avg., 28 V AirfastВ® RF Power LDMOS Transistors Data Sheet
58 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 1880 to 2025 MHz.
A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet
18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz
PNP 5 GHz wideband transistor
BFG31 DATA SHEET Product specification Supersedes data of November 1992 1995 Sep 12 DISCRETE SEMICONDUCTORS BFG31 PNP 5 GHz wideband transistor NXP Semiconductors
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will
NPN 9 GHz wideband transistor
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NPN 9 GHz wideband transistor
BFG541 DATA SHEET Product specification September 1995 DISCRETE SEMICONDUCTORS BFG541 NPN 9 GHz wideband transistor NXP Semiconductors Product specification NPN 9 GHz
Dual NPN wideband transistor
BFM505 DATA SHEET Product specification Supersedes data of 1995 Sep 04 1996 Oct 08 DISCRETE SEMICONDUCTORS BFM505 Dual NPN wideband transistor NXP Semiconductors Product
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BFM520 DATA SHEET Product specification Supersedes data of 1995 Sep 04 1996 Oct 08 DISCRETE SEMICONDUCTORS BFM520 Dual NPN wideband transistor NXP Semiconductors Product
PNP 5 GHz wideband transistor
BFQ149 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data