SiGe:C low-noise amplifier MMIC for LTE

BGU8M1 1. General description The BGU8M1 is, also known as the LTE1001M, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small

Transmitter IQ modulator

BGX7101 1. General description The BGX7101 is, also known as the BTS8001A, a device combines high performance, high linearity I and Q modulation paths for use in radio

Dual Receiver Down Mixer

BGX7220 Dual receiver down mixer 1. General description The BGX7220 device combines a pair of high performance, high linearity down-mixers for use in receivers having a common local oscillator

Dual Receiver Down Mixer

BGX7221 Dual receiver down mixer 1. General description The BGX7221 device combines a pair of high performance, high linearity down-mixers for use in receivers having a common local oscillator

PNP switching transistor

DATA SHEET Product specification 1999 Jul 23 DISCRETE SEMICONDUCTORS BSR12 PNP switching transistor book, halfpage M3D088 1999 Jul 23 2 Philips Semiconductors Product

3.3 V, one differential channel, 2 : 1 multiplexer/demultiplexer switch for PCI Express Gen3

CBTL01023 1. General description CBTL01023 is a single differential channel, 2-to-1 multiplexer

3.3 V, 2 differential channel, 2 : 1 multiplexer/demultiplexer switch for PCI Express Gen2

CBTL02042A; CBTL02042B 1. General description CBTL02042A/B is a 2 differential channel, 2-to-1 multiplexer

3.3 V, 2 differential channel, 2 : 1 multiplexer/demultiplexer switch

CBTL02043A; CBTL02043B 1. General description CBTL02043A/B is a 2 differential channel, 2-to-1 multiplexer/demultiplexer switch

A2T21H140-24S 2110-2170 MHz, 36 W Avg, 28 V Data Sheet

A2T21H140-24S 2110-2170 MHz, 36 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T21H360-23N 2110-2200 MHz, 63 W Avg, 28 V Data Sheet

A2T21H360-23N 2110-2220 MHz, 63 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations