A2T21H360-24SR6 2110-2170 MHz, 63 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

A2T21H360-24S 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering frequencies from 2110 to 2170 MHz.

A2T21H410-24S 2110-2170 MHz, 72 W Avg, 28 V Data Sheet

A2T21H410-24S 2110-2170 MHz, 72 W Avg., 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T21H450W19S 2110-2220 MHz, 89 W Avg, 30 V Data Sheet

A2T21H450W19S 2110-2220 MHz, 89 W Avg, 30 V AirfastВ®, RF power LDMOS transistor for cellular base stations

2110-2170 MHz, 38 W Avg, 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

A2T21S160-12S 2110-2170 MHz, 38 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

2110-2170 MHz, 65 W Avg, 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

A2T21S260-12S 2110-2170 MHz, 65 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T21S260W12N 2110-2200 MHz, 56 W Avg, 28 V Data Sheet

A2T21S260W12N 2110-2200 MHz, 56 W Avg., 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Data Sheet

A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T23H200W23S 2300-2400 MHz, 51 W Avg, 28 V Data Sheet

A2T23H200W23S 2300-2400 MHz, 51 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T23H300-24S 2300-2400 MHz, 66 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

66 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 2300 to 24000 MHz

A2T26H160-24SR3 2496-2690 MHz, 28 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor - Data Sheet

The A2T26H160-24SR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.