ARCHIVED 2005 - MMM5063 Advance Information Data Sheet: Tri-Band GSM GPRS 3.5 V Power Amplifier
Archived 2005 - Tri-Band GSM GPRS 3.5 V Power Amplifier
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ARCHIVED 2005 - MMM5063 Advance Information Data Sheet: Tri-Band GSM GPRS 3.5 V Power Amplifier
Archived 2005 - Tri-Band GSM GPRS 3.5 V Power Amplifier
MRF18060ALSR3 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET - Archived
Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS
MRF18060ALR3 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET - Archived
Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS
MRF21085LR3 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET - Archived
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF21085LSR3 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET - Archived
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF282SR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET - Archived
Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
MRF9085LR3, MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived
Designed for broadband commercial and industrial applications with frequencies from 865-895 MHz.
MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
MRF21030LSR3 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET - Archived
Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS
MHW9217A 870 MHz, 21.3 dB Gain, 132-Channel GaAs CATV Amplifier Module - Archived
24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module