MMC2114 Advance Information Reference Manual
Reference Manual
MMC2114 Advance Information Reference Manual
Reference Manual
MMG2401NR2 2400-2500 MHz, 27.5 dB, 26.5 dBm 802.11g WLAN Power Amplifier InGaP HBT
Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz.
MMG3013NT1 0-6000 MHz, 20 dB, 20.5 dBm InGaP HBT
The MMG3013NT1 is a general purpose amplifier that is internally Input matched and internally output matched. It is designed for a broad range of Class A, small-signal, high linearity, general
MMH3111NT1 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA Data Sheet
The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications.
MMM5062 Technical Data Sheet: Quad-Band GSM GPRS 3.5 V Power Amplifier
Archived 2005 - Quad-Band GSM GPRS 3.5 V Power Amplifier
MMM7210 WCDMA/GSM/EDGE Transceiver
The MMM7210 transceiver is a highly integrated transceiver that supports 3GPP WCDMA/GSM/EGPRS wireless standards. The digital input/output of the MMM7210 interfaces directly to a baseband processor
MRF6S18100NR1, MRF6S18100NBR1 1805-1990 MHz, 100 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF6S19060NR1, MRF6S19060NBR1 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF6S19200HR3, MRF6S19200HSR3 1930-1990 MHz, 56 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.
MRF6S21060NR1, MRF6S21060NBR1 2110-2170 MHz, 14 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz.