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Автор: Tonich от 13-02-2020, 16:48

MMC2114 Advance Information Reference Manual

Reference Manual

Автор: Tonich от 13-02-2020, 16:48

MMG2401NR2 2400-2500 MHz, 27.5 dB, 26.5 dBm 802.11g WLAN Power Amplifier InGaP HBT

Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz.

Автор: Tonich от 13-02-2020, 16:48

MMG3013NT1 0-6000 MHz, 20 dB, 20.5 dBm InGaP HBT

The MMG3013NT1 is a general purpose amplifier that is internally Input matched and internally output matched. It is designed for a broad range of Class A, small-signal, high linearity, general

Автор: Tonich от 13-02-2020, 16:48

MMH3111NT1 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA Data Sheet

The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications.

Автор: Tonich от 13-02-2020, 16:48

MMM5062 Technical Data Sheet: Quad-Band GSM GPRS 3.5 V Power Amplifier

Archived 2005 - Quad-Band GSM GPRS 3.5 V Power Amplifier

Автор: Tonich от 13-02-2020, 16:48

MMM7210 WCDMA/GSM/EDGE Transceiver

The MMM7210 transceiver is a highly integrated transceiver that supports 3GPP WCDMA/GSM/EGPRS wireless standards. The digital input/output of the MMM7210 interfaces directly to a baseband processor

Автор: Tonich от 13-02-2020, 16:48

MRF6S18100NR1, MRF6S18100NBR1 1805-1990 MHz, 100 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Автор: Tonich от 13-02-2020, 16:48

MRF6S19060NR1, MRF6S19060NBR1 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

Автор: Tonich от 13-02-2020, 16:48

MRF6S19200HR3, MRF6S19200HSR3 1930-1990 MHz, 56 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.

Автор: Tonich от 13-02-2020, 16:48

MRF6S21060NR1, MRF6S21060NBR1 2110-2170 MHz, 14 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz.