MRF7S21210HR3, MRF7S21210HSR3 2110-2170 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF7S35015HSR3 3100-3500 MHz, 15 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET

Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

MRF7S38040HR3, MRF7S38040HSR3 3400-3600 MHz, 8 W Avg., 30 V, WiMAX Lateral N-Channel RF Power MOSFETs

Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

MRF8S21172HR3, MRF8S21172HSR3 2110-2170 MHz, 42 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF9002R2 1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source

MRF9030LR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source

MRF9030NR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRF9045LR1, MRF9045LSR1 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRF9080LR3 GSM 900 MHz Frequency Band, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for largeв€’signal, commonв€’source amplifier applications in 26 volt base

MRF9100LR3, MRF9100LSR3 900 MHz, 110 W, 26 V GSM/EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common source