MMRF1304NR1, MMRF1304GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

The MMRF1304NR1 and MMRF1304GNR1 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio

MMRF1305HR5, MMRF1305HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet

The MMRF1305HR5 and MMRF1305HSR5 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military and radio

MMRF1306HR5, MMRF1306HSR5 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications.

MMRF1308HR5, MMRF1308HSR5 1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet

The MMRF1308HR5 and MMRF1308HSR5 are high ruggedness devices and are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog

MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet

The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices and are designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital

MMRF1312H 900-1215 MHz, 1000 W Peak, 52 V Data Sheet

MMRF1312H 900-1215 MHz, 1000 W Peak, 52 V RF LDMOS power transistor for high power military and commercial L-Band applications

MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet

MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V RF LDMOS power transistor for high power military and commercial L-Band radar applications

MMRF1315NR1 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor - Data Sheet

The MMRF1315NR1 is designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device are ideal for large

MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet

The MMRF1316NR1 is a high ruggedness device and is designed for use in VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design

MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet

MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V RF LDMOS power transistor for defense and commercial pulse applications, such as IFF and secondary radars