MRF1518NT1 520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies to 520 MHz.

MRF1535NT1, MRF1535FNT1, 520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 520 MHz.

MRF1550NT1, MRF1550FNT1, 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 175 MHz.

MRF1570NT1, MRF1570NFT1, 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz.

MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet

MRF1K50H 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications

MRF1K50N 1500 W CW, 1.8-500 MHz, 50 V Data Sheet

MRF1K50N 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications

MRF24300N 300 W CW, 2400-2500 MHz, 32 V Data Sheet

MRF24300N 300 W CW over 2400-2500 MHz, 32 V RF power LDMOS transistor for industrial, scientific, medical (ISM) applications at 2450 MHz.

MRF5S9080NR1 MRF5S9080NBR1 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

1.8 V dual UART, 20 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA), and XScale VLIO bus interface

SC16C852SV 1. General description The SC16C852SV is a 1.8 V, low power dual channel Universal

Single UART with I2C-bus/SPI interface, 64 bytes of transmit and receive FIFOs, IrDA SIR built-in support

Single UART with I2C-bus/SPI interface, 64 bytes of transmit and receive FIFOs, IrDA SIR built-in support