MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose

MRF6S27015NR1, MRF6S27015GNR1 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz.

MRF6S27085HR3, MRF6S27085HSR3 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL

MRF6V10010NR4 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

RF Power transistor designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications.

MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet

RF power transistors designed for applications operating at frequencies between 960 and 1215 MHz. Suitable for use in pulsed applications.

MRF6V13250HR3, MRF6V13250HSR3 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs

RF Power transistors designed for CW and pulsed applications operating at 1300 MHz. These devices are suitable for use in CW and pulsed applications.

MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. Thes devices are suitable for use in pulsed applications.

MRF6V2010N 10 W over 10-450 MHz, 50 V Data Sheet

Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz.