MRFE6S9045NR1 880 MHz, 10 W Avg., 28 V Single N-CDMA, Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source

MRFE6S9125NR1, MRFE6S9125NBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRFE6VP100HR5, MRFE6VP100HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz.

MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

MRFE6VP5150N and MRFE6VP5150GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio

MRFE6VP5300NR1, MRFE6VP5300GNR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet

MRFE6VP5300N and MRFE6VP5300GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio

MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.

MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

MRFE6VP61K25H, MRFE6VP61K25HS, and MRFE6VP61K25GS are high ruggedness devices and are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital

MRFE6VP61K25N, MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet

MRFE6VP61K25N, MRFE6VP61K25GN are extremely rugged 1250 W transistor for ISM, broadcast, aerospace and mobile radio applications between 1.8 and 600 MHz.