MRF5S9070MR1 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MW4IC2230MBR1, MW4IC2230GMBR1 2110-2170 MHz, 30 W, 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Archived

The MW4IC2230 wideband integrated circuit is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers

MRF6S9160HR3, MRF6S9160HSR3 880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.

MRF6S9130HR3, MRF6S9130HSR3 880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.

MRF6S9125MR1, MRF6S9125MBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRF6S18060MR1, MRF6S18060MBR1 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

MRF5S9101MR1, MRF5S9101MBR1 869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

MRF5S9100MR1, MRF5S9100MBR1 880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRF5S4140HR3, MRF5S4140HSR3 465 MHz, 28 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz.

MRF5P21240R6 2170 MHz, 52 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular