MRFE6S8046NR1, MRFE6S8046GNR1 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF9482 Product Preview Data Sheet: Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET

Archived 2005 - Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

MRF9200LR3, MRF9200LSR3 880 MHz, 40 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRF9130LR3, MRF9130LSR3 GSM/GSM EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRF9100LR3, MRF9100LSR3 900 MHz, 110 W, 26 V GSM/EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common source

MRF9080LR3 GSM 900 MHz Frequency Band, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for largeв€’signal, commonв€’source amplifier applications in 26 volt base

MRF9045LR1, MRF9045LSR1 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRF9030NR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRF9030LR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source

MRF9002R2 1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source