MRF6P23190HR6 2300-2400 MHz, 40 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
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MRF6P23190HR6 2300-2400 MHz, 40 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET
Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
MRF6P21190HR6 2110-2170 MHz, 44 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF6P18190HR6 1805-1880 MHz, 44 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET
Designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF5S9101NR1, MRF5S9101NBR1, 869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
MRF5S9100NR1, MRF5S9100NBR1, 880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source
MRF5S9070NR1, 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source
MRF5S4125NR1, MRF5S4125NBR1, 450-480 MHz, 25 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 500 MHz.
MRF5S21130HR3, MRF5S21130HSR3 2110-2170 MHz, 28 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio
MRF5S21045NR1, MRF5S21045NBR1, 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF5S19150HR3 1930-1990 MHz, 32 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET
Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.